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News
February 17, 2012
Important Dates
April 30, 2011 - Return of Registration Card
May 13, 2012 - Young Scientists Contest
May 13, 2012 - Abstract Deadline
May 27, 2012 - Abstract Acceptance
June 3, 2012 - Payment Deadline
February 7, 2012
Invitation
You are cordially invited to participate in the IX-th International Conference
“Ion Implantation and Other Applications of Ions and Electrons”, ION 2012. The
conference will be held in Kazimierz Dolny, Poland,
from June 25 to June 28, 2012.
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IX-th International Conference
ION IMPLANTATION AND OTHER APPLICATIONS OF IONS AND ELECTRONS
Kazimierz Dolny, Poland
June 25-28, 2012
ION 2012
Monday, June 25
10:00 Registration
13:00-14:30 Lunch
15:00 Opening of the Conference
15:15
G. Sattonnay, L. Thomé, I. Monnet, C. Grygiel, C. Legros, R. Tetot,
Phase transformations
in pyrochlores induced by swift heavy ion irradiation:
Role of composition and influence of chemical bonding
15:45
Jacek Jagielski, Urszula Ostaszewska, Dariusz Bielinski,
Anna Piatkowska, Magdalena Romaniec,
Structural and functional properties
of ion beam modified elastomers
16:15
Wolfgang Skorupa,
Advanced approaches to electronic materials using subsecond thermal processing
16:45
Kun Gao, S. Prucnal, W. Skorupa, M. Helm, Shengqiang Zhou,
Fabrication of Si1-xGex Alloy on Silicon by Ge-ion-implantation
and Short-Time-Annealing
17:05 Coffee break
17:30
Liudvikas Pranevicius, Darius Milcius, Liudas Pranevicius,
Water vapor-plasma-enhanced oxidation
of hydrogenated titanium films
18:00
Katarzyna Werniewicz,
Scientific publishing – writing successful papers
19:30 Barbecue
Tuesday, June 26
7:30-8:30 Breakfast
9:00
F.L. Bregolin, U.S. Sias, M. Behar, S. Prucnal, L. Rebohle; W. Skorupa,
Ion
implantation
techniques for silicon based photovoltaics
and light emitters
9:30
L. Vines, P. Neuvonen, A. Azarov, B.G. Svensson,
Intrinsic defect formation and doping of ZnO by ion implantation
10:00
Wojciech Wierzchowski, Andrzej Turos, Krzysztof Wieteska, Anna Stonert, Renata
Ratajczak, Przemysław Jóźwik, Richard Wilhelm, Shavkat Akhamadaliev, Krystyna
Mazur, Carsten Paulmann,
Ion implantation of the 4H SiC homoepitaxial layers and substrates with MeV Se
and Al ions
10:30
T. Tsvetkova, C.D. Wright, P. Hosseini, L. Bischoff, J. Żuk,
Implantation temperature effects on the optical pattern fabrication in a-SiC:H
films by Ga+ focused ion beams
10:50
Y.S. Lin, G.M. Wu, K.N. Tu,
Ion beam surface modification of gallium nitride films for high efficient light
emitting diodes
11:10 Coffee break
11:40 Young Scientist Contest
11:40
Łukasz Gluba, Mirosław Kulik, Witold Rzodkiewicz, Aleksander P. Kobzev, Jerzy
Żuk,
Effects of high temperature annealing on optical properties of
ion implanted GaAs subsurface
layers
12:00
J. Fiedler, V. Heera, R. Skrotzki, T. Herrmannsdörfer, M. Voelskow, A. Mücklich,
B. Schmidt, W. Skorupa, G. Gobsch, M. Helm,
Superconducting layers by Ga implantation and short-term
annealing in Si
12:20
Przemysław Jóźwik, N. Sathish, L. Nowicki, J. Jagielski, A. Turos,
Analysis of crystal lattice
deformation by ion channeling
12:40
Nail Khalitov, Nikolai Lyadov, Valerii Valeev, Il'dar Faizrakhmanov, Rustam
Khaibullin, Eugenii Dulov, Lenar Tagirov, Sinan Kazan, Maksut Maksutoğlu, Faik
Mikailzade,
Magnetic and magnetoelectric properties of 3d-ion implanted barium titanate
(BaTiO3)
13:00
Nikolai Lyadov, Valery Valeev, Vladimir Nuzhdin, Andrey L. Stepanov, Ildar
Faizrakhmanov,
Optical studies of ZnO and Al2O3 implanted with silver
ions
13:20
Denise Reichel, Wolfgang Skorupa,
Ripple Pyrometry for Milliscond Annealing
14:00 Lunch
15:00-17:00 POSTER SESSION
17:00
Fadei Komarov, Alexander Kamyshan, Pavel Grishin,
Tapered Capillary Optics and Its Applications in Materials Analysis
17:30
R. Hurley,
Investigation of hydrogen implanted germanium using micro-Raman and spreading
resistance profiling for layer transfer semiconductor applications
18:00
S. Prucnal, J. Żuk, K. Pyszniak, A. Droździel, S. Facsko, A. Mücklich, S.Q.
Zhou, X. Ou, M.O. Liedke, B. Liedke, M. Turek, W. Skorupa,
Flash Lamp Processing of III/V compound semiconductors on silicon and SOI wafers
for functional photronic devices
18:30
Katarzyna Werniewicz and Wolfgang Skorupa,
Low-cost and large-area electronics, roll-to-roll processing and beyond
18:50
A.V. Byeli, V.A. Kukareko, A.N. Karpovich, I.I. Taran,
Wear and corrosion resistance of austenite steels ion implanted with nitrogen
20:00 Conference Dinner
Wednesday, June 27
7:30-8:30 Breakfast
8:30 Excursion
Baranów Sandomierski
12:00-13:00 Lunch
Sandomierz
18:30 Organ concerto - The Cathedral, Sandomierz
22:00 Dinner
Thursday, June 28
7:30-8:30 Breakfast
9:00
P. Konarski, A. Kozłowski, R. Diduszko,
Quantification procedures in SIMS depth profiling of annealed NiTi/SiC structure
9:20
Michał Krysztof, Witold Słówko,
Throttling aperture as the gaseous secondary electron detector in the Variable
Pressure / Environmental SEM
9:40
Lukasz Rzeznik, Robert Paruch, Barbara J. Garrison, Zbigniew Postawa,
Sputtering of benzene sample by large Ar and Kr clusters - molecular dynamics
computer simulations
10:00
Bronisław Psiuk, Jacek Szade, Krzysztof Szot,
Segregation processes in SrTiO3 surface layers upon low energy Ar+
bombardment
10:20
A.D. Pogrebnjak, V.M. Beresnev, D.A. Kolesnikov, O.V. Bondar, Y. Takeda, K.
Oyoshi, A.P. Shypylenko, M.V. Kaverin, G. Abrasonis, R. Krause-Rehberg, A.A.
Andreev, C. Karwat,
Multicomponent
(Ti-Zr-Hf-V-Nb)N nanostructure coatings fabrication,
high hardness and wear resistance
10:40
Darya Alontseva, Alexander Krasavin, Alexander Pogrebnjak, Alyona Russakova,
Modification of Ni-based plasma detonation coatings by a low-energy DC e-beam
11:00 Coffee break
11:30
Halina Krzyżanowska, Karl S. Ni, Yijing Fu, Philippe M. Fauchet,
Towards a Si-based laser – efficient infrared emission from Er-doped SiO2/nc-Si
multilayers
12:00
W. Rzodkiewicz, M. Kulik, J. Żuk, A. Panas, A.P. Kobzev,
Nuclear and optical analyses of MOS devices
12:20
Marcin Turek,
Surface ionization of radioactive nuclides - numerical simulations
12:40
Mirosław Kulik, Witold Rzodkiewicz, Łukasz Gluba, Dariusz Mączka, Aleksander P.
Kobzev, Bronisław Słowiński,
Dielectric function
of native oxides on implanted GaAs
13:00 Closing of the Conference
13:15 Lunch
14:00 Departure
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