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Program in pdf file
Program of the Conference
VIII-th INTERNATIONAL CONFERENCE
Ion Implantation and Other Applications
of Ions and Electrons
Kazimierz Dolny,
Poland,
June 14-17, 2010
Monday, June 14, 2010
10:00
- Registration
13:00
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Lunch
14:00
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Opening of
the Conference
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Afternoon session I
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14:15
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L. Pranevičius
(Lithuania)
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Hydrogen separation under molecular ion
implantation in nanocrystalline Mg films
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14:45
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J. Piekoszewski
(Poland)
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The effect of chromium on formation of
nitrogen expanded austenite phase in
Fe-Cr alloy induced by high intensity
nitrogen pulses
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15:15
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A.D. Pogrebnjak
(Ukraine)
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Application of plasma jets for
fabrication of coatings from metals,
hard alloys, ceramics,
and their combination
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15:45
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D.L. Alontseva
(Kazakhstan)
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The structural phase changes in Ni –Cr-
and
Co-Cr based coatings deposited by plasma
detonation and the results of coatings’
modification by duplex treatment
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16:05
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Coffee break
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Afternoon session II
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16:30
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M. Ali
(Egypt)
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The use of PIXE in evaluation of Coptic
Wall Paintings conservation (case study)
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16:50
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A. Michel
(France)
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Interaction between energy of deposited
species and intrinsic stress build-up in
thin solid films grown by magnetron
sputtering
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17:20
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P. Konarski
(Poland)
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Vacuum annealing effects in nickel
alloys applied in aviation industry –
Depth profile analysis
by secondary ion mass spectrometry
(SIMS)
and glow discharge mass spectrometry
(GDMS)
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17:40
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I. Jóźwik
(Poland)
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Thermal annealing of carbon layers
formed via ion-beam induced hydrocarbons
decomposition
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18:00
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Scientific Committee Meeting
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19:15
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Wellcome
dinner
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Tuesday, June 15,
2010
7:30¸8:30
Breakfast
Morning session I
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8:30
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K. Potzger
(Germany)
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Ion-beam synthesis of magnetic
semiconductors
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9:00
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A. Maziewski
(Poland)
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Tuning of ultrathin film magnetic
properties by ions irradiation
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9:30
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A. Misiuk
(Poland)
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Properties of Si:V annealed under
enhanced hydrostatic pressure
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10:00
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Z.
Werner
(Poland)
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The effects of He irradiation in
manganese implanted silicon
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10:30
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J.
Fedotova
(Belarus)
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Magnetoresistance in n-Si/SiO2/Ni
nanostructures manufactured by swift
heavy ion-induced modification
technology
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10:50
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Coffee break
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Morning session II
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11:15
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L. Thomé
(France)
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On the damage build-up in ion-irradiated
ceramics
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11:45
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J. Jagielski
(Poland)
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Effect of grain size on mechanical
properties
of irradiated mono- and polycrys-talline
MgAl2O4
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12:15 – 14:00
Poster Session I
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14:00
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Lunch
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Afternoon session III
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15:00
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J.
Sullivan
(United
Kingdom)
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Deposition and properties of ultra fast
deposited diamond-like hydrogenated
carbon films
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15:30
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G.M. Wu
(Taiwan
R.O.C.)
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Aluminum-doped zinc oxide thin films
prepared by sol-gel and RF magnetron
sputtering
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15:50
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A. Turos
(Poland)
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Stopping power and energy straggling of
channeled He-ions in GaN
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16:10
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W. Wierzchowski
(Poland)
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X-ray diffraction studies of strain
distibution
in 6H SiC repeatedly implanted with Al
ions
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16:40
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G. Gawlik
(Poland)
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Ion and electron beam induced
luminescence
of rare earth doped YAG crystals
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17:00
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F. Nickel
(Germany)
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News about the precise numerical value
of the em fine structure constant
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17:30
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Z. Wroński
(Poland)
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Diagnostics of ion-cathode interaction
of glow discharges
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18:00
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Dinner
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19:30
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Organ
Concerto
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Wednesday,
June 16, 2010
7:30¸8:30
Breakfast
Young Scientist Contest (oral and poster)
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8:30
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K. Pągowska
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RBS\channeling and TEM study of damage
buildup in ion bombarded III-N compounds
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8:50
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A.
Stępkowska
(Poland)
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Application of electron beam radiation
to modify crosslink structure in rubber
vulcanizates and its tribological
consequences
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9:10
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O. Yastrubchak
(Poland,
Ukraine)
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Application of the ion implantation for
the synthesis and modification of the (Ga,Mn)As
ferromagnetic semiconductors
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9:30
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S. Abd El Aal
(Egypt)
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Identification of painting layers
Sennefer Tomb
by ion beam analysis
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9:50
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J. Lehmann
(Germany)
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Wear-out phenomena in Si-based light
emitting devices with ion beam implanted
europium
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10:10
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M.
Sochacki
(Poland)
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Reactive ion etching (RIE) of 4H-SiC in
fluorinated plasma for device
fabrication
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10:30
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S. Prucnal
(Poland)
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Optical and microstructural properties
of In(As,N) quantum structure made by
ion implantation
and flash lamp processing
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8:30÷10:50
Posters:
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I. A.
Chugrov
(Russia)
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Effect of ion doping on optical
properties
of multilayered nc-Si/high-k-oxide
structures
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A.
Mikhaylov
(Russia)
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Ion-beam synthesis and modification of
light-emitting silicon and
silicon-carbon nanoclusters
in oxide layers
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R.
Ratajczak
(Poland)
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Defect transformations in ion bombarded
InGaAsP
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V. Tsvyrko
(Belarus)
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Formation of H-donors and radiation
defects
in proton implanted SiGe
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10:50
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Coffee break
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11:00 – 13:00
Poster Session II
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13:00
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Lunch
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14:00
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Excursion
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20:00
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Barbecue
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Thursday, June 17,
2010
7:30¸8:30
Breakfast
Morning session IV
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8:30
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F.F.
Komarov
(Belarus)
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Peculiarities of swift proton
transmission through tapered glass
capillaries
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9:00
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W. Skorupa
(Germany)
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Advances in
Si & Ge millisecond processing:
From silicon-on-insulator to
superconducting Ge
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9:30
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B. Nycz
(Poland)
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Diagnostics of high intensity pulsed
plasma beams by ex-post analysis of
mophology of the irradiated silicon
surface
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9:50
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R. Hurley
(United
Kingdom)
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Hydrogen and helium implantation in
germanium for semiconductor layer
transfer applications
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10:20
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C.
Cherkourk
(Germany)
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Estrogen detection in waterish solutions
by silicon based light emitters
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10:40
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Coffee break
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Morning session V
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11:00
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B. Słowiński
(Poland)
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Space structure and fluctuation of
electromagnetic cascades produced by
100-3500 MeV gamma quanta in heavy
amorphous media
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11:30
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T. Wilczyńska
(Poland)
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The changes of manganin thermoresistance
properties induced by Nb, Ti, C low
energy and then Kr high energy ion
implantation
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11:50
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M. Turek
(Poland)
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Plasma ion source with an internal
evaporator
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12:10
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P. Szałański
(Poland)
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Analysis of the iron state in ferric and
ferrous iron containing pharmaceutical
products available in
Poland
by Mössbauer spectroscopy
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12:30
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Closing of
the Conference
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13:00
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Lunch
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14:00
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Departure
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